6N60 1 / 8 may.2015-rev.00 www.dyelec.com 1. gate 2. drain 3. source pin definition: product summary v ds (v) r ds(on) ( ?) current(a) 600 1.5 @ v gs =10v 6 600v n-channel power mosfet absolute maximum ratings (t c =25c, unless otherwise specified) r ds(on) <1.5? @ v gs =10v fast switching capability low gate charge lead free in compliance with eu rohs directive. green molding compound block diagram ordering information case: to-220,ito-220,to-262,to-263 package d g s parameter symbol ratings unit drain-source voltage v dss 600 v gate-source voltage v gss 30 v avalanche current (note 2) i ar 6 a continuous drain current i d 6 a pulsed drain current (note 2) i dm 24.8 a avalanche energy single pulsed (note 3) e as 440 mj peak diode recovery dv/dt (note 4) dv/dt 4.5 ns power dissipation to-220/to-262/to-263 p d 125 w ito-220 42 w to-251/to-252 55 w junction temperature t j +150 c operating temperature t opr -55 ~ +150 c storage temperature t stg -55 ~ +150 c notes: 1. absolute maximum ratings are those values be yond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. 2. repetitive rating : pulse width limited by t j 3. l = 25mh, i as = 6a, v dd = 90v, r g = 25 ? , starting t j = 25c 4. i sd 6.2a, di/dt 200a/ s, v dd bv dss , starting t j = 25c part no. package packing dmt6N60-tu to-220 50pcs / tube dmf6N60-tu ito-220 50pcs / tube dmk6N60-tu to-262 50pcs / tube dmg6N60-tu to-263 50pcs / tube dmg6N60-tr to-2 63 800pcs / 13" reel
2 / 8 thermal data 6N60 600v n-channel power mosfet electrical characteristics (t c =25c, unless otherwise specified) parameter symbol rating unit junction to ambient to-220/ito-220 to-262 /to-263 ja 62.5 c/w junction to case to-220 to-262/to-263 jc 1.2 c/w ito-220 3.5 parameter symbol t est conditions typmin max unit off characteristics drain-source breakdown voltage bv dss gs v =0v, i d =250 a 600 v drain-source leakage current i dss v ds =600v, v gs =0v 10 a v ds =480v, v gs =0v, t j =125c 10 a gate- source leakage current forward i gss v g= 30v, v ds =0v 100 na reverse v gs =-30v, v ds =0v -100 na breakdown voltage temperature coefficient bv dss / t j i d =250 a, referenced to 25c 0.53 v/c on characteristics gate threshold voltage v gs ( th ) ds v =v gs , i d =250 a 2.0 4.0 v static drain-source on-state resistance r ds ( on ) gs v =10v, i d =3.1a 1.0 1.5 ? dynamic characteristics input capacitance c iss v ds =25v, v gs =0v, f=1.0 mhz 770 1000 pf output capacitance c oss pf 95 120 reverse transfer capacitance c rss 10 13 pf switching characteristics turn-on delay time t d( on ) v dd =300v, i d =6.2a, r g =25 ? (note 1, 2) 40 50 ns turn-on rise time t r ns 70 150 turn-off delay time t d( off ) 40 90 ns turn-off fall time t f 80 100 ns total gate charge q g v ds =480v, i d =6.2a, v gs =10v (note 1, 2) 20 25 nc gate-source charge q gs nc 4.9 gate-drain charge q gd 9.4 nc drain-source diode characteristics and maximum ratings drain-source diode forward voltage v sd gs v =0v, i s =6.2 a 1.4 v maximum continuous drain-source diode forward current i s 6.2 a maximum pulsed drain-source diode forward current i sm 24.8 a reverse recovery time t rr v gs =0v, i s =6.2a, di f /dt =100 a/ s (note 1) 290 ns reverse recovery charge q rr c 2.35 notes: 1. pulse test: pulse width 300 s, duty cycle 2%. 2. essentially independent of operating temperature. may.2015-rev.00 www.dyelec.com
3 / 8 test circ uits and waveforms 600v n-channel power mosfet same type as d.u.t. l v dd driver v gs r g - v ds d.u.t. + * dv/dt controlled by r g * sd controlled by pulse period * d.u.t.-d vice under test - + peak diode recovery dv/dt test circuit p. w. period d= v gs (driver) i sd (d.u.t.) i fm , body diode forward current di/dt i rm body diode reverse current body diode recovery dv/dt body diode forward voltage drop v dd 10v v ds (d.u.t.) v gs = p.w. period peak diode recovery dv/dt waveforms may.2015-rev.00 www.dyelec.com 6N60
4 / 8 test circuits and waveforms(cont.) 600v n-channel power mosfet switching test circuit switching waveforms gate charge test circuit gate charge waveform v dd bv dss i as i d(t) v ds(t) unclamped inductive switching test circuit t p time unclamped inductive switching waveforms jan.2015-rev.0 0 www.sddydz.com may.2015-rev.00 www.dy elec.com 6N60
5 / 8 typical characteristics 600v n-channel power mosfet drain current,i d (a) drain current, i d (a) drain current,i d (a) drain current,i d (a) may.2015-rev.00 www.dyelec.com 6N60
6 / 8 600v n-channel power mosfet may.2015-rev.00 www.dyelec.com 6N60 t o - 220 mechanical drawing t o - 220 mechanical drawing it o-220 m echanical drawing
6N60 6 0 0v n-channel power mosfet 7 / 8 may,2015-rev.0 0 www.dyelec.com to-2 62 mechanical drawing to-2 63 mechanical drawing
8 / 8 notice specifications of the products displayed herein are subject to change without notice. diyi or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. information contained herein is intended to provide a product description only. no license, express or implied, to any intellectual property rights is granted by this document. except as provided in diyi s terms and conditions of sale for such products, diyi assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of diyi products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. the products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify diyi for any damages resulting from such improper use or sale. 600v n-channel power mosfet may.2015-rev.00 www.dyelec.com 6N60
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